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https://hdl.handle.net/20.500.14094/90007336
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2024-04-25
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90007336 (fulltext)
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メタデータID
90007336
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open access
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タイトル
Infrared photodetector sensitized by InAs quantum dots embedded near an Al0.3Ga0.7As/GaAs heterointerface
著者
Murata, Takahiko ; Asahi, Shigeo ; Sanguinetti, Stefano ; Kita, Takashi
著者名
Murata, Takahiko
著者ID
A1001
研究者ID
1000060782729
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=f6b9bd62c178c09e520e17560c007669
著者名
Asahi, Shigeo
朝日, 重雄
アサヒ, シゲオ
所属機関名
工学研究科
著者名
Sanguinetti, Stefano
著者ID
A0491
研究者ID
1000010221186
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=7853123c7c766d89520e17560c007669
著者名
Kita, Takashi
喜多, 隆
キタ, タカシ
所属機関名
先端融合研究環
収録物名
Scientific Reports
巻(号)
10(1)
ページ
11628-11628
出版者
Nature Research
刊行日
2020-07-15
公開日
2020-08-04
抄録
Mid-infrared sensors detect infrared radiation emitted from objects, and are actually widely used for monitoring gases and moisture as well as for imaging objects at or above room temperature. Infrared photodetectors offer fast detection, but many devices cannot provide high responsivity at room temperature. Here we demonstrate infrared sensing with high responsivity at room temperature. The central part of our device is an Al0.3Ga0.7As/GaAs heterostructure containing InAs quantum-dot (QD) layer with a 10-nm-thick GaAs spacer. In this device, the electrons that have been accumulated at the heterointerface are transferred to the conduction band of the Al0.3Ga0.7As barrier by absorbing infrared photons and the following drift due to the electric field at the interface. These intraband transitions at the heterointerface are sensitized by the QDs, suggesting that the presence of the QDs increases the strength of the intraband transition near the heterointerface. The room-temperature responsivity spectrum exhibits several peaks in the mid-infrared wavelength region, corresponding to transitions from the InAs QD and wetting layer states as well as the transition from the quantized state of the triangular potential well at the two-dimensional heterointerface. We find that the responsivity is almost independent of the temperature and the maximum value at 295 K is 0.8 A/W at ~ 6.6 µm for a bias of 1 V, where the specific detectivity is 1.8x10(10) cmHz(1/2)/W.
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工学研究科
先端融合研究環
学術雑誌論文
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© The Author(s) 2020.
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
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資源タイプ
journal article
言語
English (英語)
eISSN
2045-2322
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関連情報
DOI
https://doi.org/10.1038/s41598-020-68461-w
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