90007352

open access

Accepted Manuscript

Evaluation of organic metal-oxide-semiconductor capacitors based on a distributed constant circuit

English (英語)

Japanese Journal of Applied Physics

59(3)

036503-036503

IOP Publishing

2020-03-01

2021-03-01

Published online 27 February 2020

The capacitance characteristics of pentacene metal-oxide-semiconductor (MOS) capacitors with a large uncovered pentacene area have been investigated. The capacitance measured was examined by assuming that the uncovered area is represented by a distributed constant circuit. The frequency dependence of the capacitance was reproduced by an equation derived based on the assumption. The sheet resistance for the uncovered area of a MOS capacitor was calculated as a function of the gate voltage from the capacitance measured. The mobility of a MOS capacitor with an uncovered area was estimated by fitting a curve to the gate voltage dependence of the sheet resistance, and was in the range of 0.48-0.64 cm(2) V(-1) s(-1). In addition, the mobilities were compared with those calculated from the current-voltage characteristics of pentacene transistors fabricated on the same substrate.

学術雑誌論文

© 2020 The Japan Society of Applied Physics. This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab755b